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1998•Optics LettersRequires access

Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime

Stephen P. Hegarty, G. Huyet, Pierpaolo A. Porta, John Gerard McInerney

Open publisher page 22 citations

Abstract

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.

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What this paper is about

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.

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OpenAlex reports 22 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.

Key concepts: Laser, Optics, Semiconductor, Semiconductor laser theory, Laser power scaling, Semiconductor optical gain, Temporal resolution, Physics

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