2005•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
An improved modal gain model for semiconductor lasers
Cheng Guan Lim, Stavros Iezekiel, C.M. Snowden
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Abstract
The calculated gain spectrum of a semiconductor laser based on a generic modal gain model reveals a gain peak that is higher than measured. Analyses of the model and the gain mechanism in semiconductor lasers suggest that the accuracy of the model can be improved by re-formulating the carrier occupation probabilities associated with the model. As a result, good agreement between the optical gain spectrum calculated using the revised model and measured results is achieved.