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Theory of optical gain and threshold properties of semiconductor lasers

A. Aleksanian, I A Poluéktov, Yu. M. Popov

Open publisher page 11 citations

Abstract

The theory of optical gain in highly doped semiconductors employed for semiconductor lasers is developed based on the Green function approach. With the help of the analytical expression obtained for optical gain, the threshold properties of semiconductor lasers and their dependence on concentration of doping impurities and on temperature are studied. Results of numerical calculations of threshold characteristics for the most interesting cases are presented.

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What this paper is about

The theory of optical gain in highly doped semiconductors employed for semiconductor lasers is developed based on the Green function approach. With the help of the analytical expression obtained for optical gain, the threshold properties of semiconductor lasers and their dependence on concentration of doping impurities and on temperature are studied. Results of numerical calculations of threshold characteristics for the most interesting cases are presented.

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OpenAlex reports 11 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The theory of optical gain in highly doped semiconductors employed for semiconductor lasers is developed based on the Green function approach. With the help of the analytical expression obtained for optical gain, the threshold properties of semiconductor lasers and their dependence on concentration of doping impurities and on temperature are studied. Results of numerical calculations of threshold characteristics for the most interesting cases are presented.

Key concepts: Semiconductor optical gain, Semiconductor laser theory, Semiconductor, Materials science, Laser, Optoelectronics, Doping, Gain

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