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Fabrication of three-dimensional HSQ resist structure using electron beam lithography

Y. Matsubara, Jun Taniguchi, Iwao Miyamoto

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Abstract

Electron beam lithography (EBL) is very important for semiconductor manufacturing process, especially for making photo-masks and ASIC devices. EBL is also important for fabricating MEMS, MOES and so on. In this paper, we used hydrogen silsesquioxane (HSQ), which acts as a negative resist (Namatsu, 1998). And we fabricated three-dimensional HSQ resist structure by changing the EB acceleration voltage.

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What this paper is about

Electron beam lithography (EBL) is very important for semiconductor manufacturing process, especially for making photo-masks and ASIC devices. EBL is also important for fabricating MEMS, MOES and so on. In this paper, we used hydrogen silsesquioxane (HSQ), which acts as a negative resist (Namatsu, 1998). And we fabricated three-dimensional HSQ resist structure by changing the EB acceleration voltage.

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Available abstract

Electron beam lithography (EBL) is very important for semiconductor manufacturing process, especially for making photo-masks and ASIC devices. EBL is also important for fabricating MEMS, MOES and so on. In this paper, we used hydrogen silsesquioxane (HSQ), which acts as a negative resist (Namatsu, 1998). And we fabricated three-dimensional HSQ resist structure by changing the EB acceleration voltage.

Key concepts: Hydrogen silsesquioxane, Resist, Electron-beam lithography, Materials science, Lithography, Next-generation lithography, Microelectromechanical systems, Fabrication

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