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Three Dimensional Process Simulator for Photo and Electron Beam Lithography, and Estimations of Proximity Effects

Yoshihiko Hirai, Masaru Sasago, Masayuki Endo, Kazuhiko Ikeda, S. Hayama, S. Tomida

Open publisher page 2 citations

Abstract

In both photo lithography with reduction projection printings and electron beam lithography with direct writing techniques, their resolutions are limited by the proximity effect caused by the diffraction in photo lithography and electron backscattering in electron beam lithography, respectively. To evaluate and clear them, computer simulation is very useful for sub-micron pattern fabrications.

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In both photo lithography with reduction projection printings and electron beam lithography with direct writing techniques, their resolutions are limited by the proximity effect caused by the diffraction in photo lithography and electron backscattering in electron beam lithography, respectively. To evaluate and clear them, computer simulation is very useful for sub-micron pattern fabrications.

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Available abstract

In both photo lithography with reduction projection printings and electron beam lithography with direct writing techniques, their resolutions are limited by the proximity effect caused by the diffraction in photo lithography and electron backscattering in electron beam lithography, respectively. To evaluate and clear them, computer simulation is very useful for sub-micron pattern fabrications.

Key concepts: Electron-beam lithography, Lithography, Stencil lithography, X-ray lithography, Maskless lithography, Next-generation lithography, Optics, Resist

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