2010•Journal of Shanghai University (English Edition)Requires access

Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation

Li-feng Bian, Zhao Jin

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Key concepts: Quantum dot, Optoelectronics, Excitation, Photoluminescence, Gallium arsenide, Materials science, Molecular beam epitaxy, Relaxation (psychology)

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Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation — Research Paper | ScholarLens