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2018•Unpublished venueRequires access

New InGaAs THz Schottky Detectors with Nanowire Contact for Zero-Bias Operation

Ahid S. Hajo, Oktay Yilmazoglu, Franko Küppers

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Abstract

In this paper we report a new THz Schottky detector based on vertically contacted high doped (1 × 1018cm-3) indium gallium arsenide (InGaAs) by using a small diameter (100 nm) silver nanowire (NW) as air-bridge contact. Compared to Schottky diodes based on gallium arsenide (GaAs) it has better zero-bias operation of 100 μA @ 0.05 V raising to more than 1 mA @ 0.27 V for lower noise application.

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What this paper is about

In this paper we report a new THz Schottky detector based on vertically contacted high doped (1 × 1018cm-3) indium gallium arsenide (InGaAs) by using a small diameter (100 nm) silver nanowire (NW) as air-bridge contact. Compared to Schottky diodes based on gallium arsenide (GaAs) it has better zero-bias operation of 100 μA @ 0.05 V raising to more than 1 mA @ 0.27 V for lower noise application.

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Available abstract

In this paper we report a new THz Schottky detector based on vertically contacted high doped (1 × 1018cm-3) indium gallium arsenide (InGaAs) by using a small diameter (100 nm) silver nanowire (NW) as air-bridge contact. Compared to Schottky diodes based on gallium arsenide (GaAs) it has better zero-bias operation of 100 μA @ 0.05 V raising to more than 1 mA @ 0.27 V for lower noise application.

Key concepts: Gallium arsenide, Schottky diode, Nanowire, Indium gallium arsenide, Optoelectronics, Terahertz radiation, Materials science, Indium arsenide

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