2009•Unpublished venueRequires access

Characteristics of a Local Oxidation of silicon multi-tie body polysilicon thin-film transistor

Hsien-Nan Chiu, Jyi-Tsong Lin, Yi-Chuen Eng, Po-Hiesh Lin, Tzu-Feng Chang, Chih-Hung Sun, Hsuan-Hsu Chen, Chih-Hao Kuo

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Abstract

This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that this study can help us understand the influence of body-tied scheme on the properties of poly-Si TFT.

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What this paper is about

This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that this study can help us understand the influence of body-tied scheme on the properties of poly-Si TFT.

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Available abstract

This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that this study can help us understand the influence of body-tied scheme on the properties of poly-Si TFT.

Key concepts: Thin-film transistor, LOCOS, Polycrystalline silicon, Materials science, Silicon, Transistor, Optoelectronics, Reliability (semiconductor)

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