Characteristics of a Local Oxidation of silicon multi-tie body polysilicon thin-film transistor
Hsien-Nan Chiu, Jyi-Tsong Lin, Yi-Chuen Eng, Po-Hiesh Lin, Tzu-Feng Chang, Chih-Hung Sun, Hsuan-Hsu Chen, Chih-Hao Kuo
Abstract
Hsien-Nan Chiu, Jyi-Tsong Lin, Yi-Chuen Eng, Po-Hiesh Lin, Tzu-Feng Chang, Chih-Hung Sun, Hsuan-Hsu Chen, Chih-Hao Kuo
Abstract
This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that this study can help us understand the influence of body-tied scheme on the properties of poly-Si TFT.
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This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that this study can help us understand the influence of body-tied scheme on the properties of poly-Si TFT.
Key concepts: Thin-film transistor, LOCOS, Polycrystalline silicon, Materials science, Silicon, Transistor, Optoelectronics, Reliability (semiconductor)