1988•Japanese Journal of Applied PhysicsRequires access

Study on Narrow-Stripe Polycrystalline Silicon Thin-Film Transistors

Tatsuya Takeshita, Takashi Unagami, Osamu Kogure

Abstract

N-channel thin-film transistors which have narrow channel stripes (narrow-stripe TFT's) have been proposed to improve the characteristics of poly-Si TFT's. The carrier mobility of narrow-stripe TFT's is larger than that of conventional structure TFT's. It is found that the mobility increase is due to the reduction of the potential-barrier height at the poly-Si grain boundary and the potential-barrier height decreases with decreasing channel stripe width. Furthermore, after hydrogen-plasma treatment, the carrier mobility in narrow-stripe TFT's with 0.9µm wide stripes becomes 7.4 cm2/(V·s) which is more than three times that of conventional TFT's.

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Key concepts: Thin-film transistor, Polycrystalline silicon, Materials science, Transistor, Grain boundary, Optoelectronics, Silicon, Channel (broadcasting)