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2014•Unpublished venueRequires access

Design of a V-band MMIC LNA for WPAN applications around 60 GHz

Noha Al Majid, Saïd Mazer, Moulhime El Bekkali, Catherine Algani

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Abstract

This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1dB and its high gain which is about 23 dB. An input return loss of -6.61 dB and an output return loss of -11.26 dB are also achieved by this LNA.

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What this paper is about

This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1dB and its high gain which is about 23 dB. An input return loss of -6.61 dB and an output return loss of -11.26 dB are also achieved by this LNA.

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Available abstract

This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1dB and its high gain which is about 23 dB. An input return loss of -6.61 dB and an output return loss of -11.26 dB are also achieved by this LNA.

Key concepts: Monolithic microwave integrated circuit, Cascode, Low-noise amplifier, Noise figure, Return loss, High-electron-mobility transistor, Electrical engineering, Amplifier

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Design of a V-band MMIC LNA for WPAN applications around 60 GHz — Research Paper | ScholarLens