Ramesh Mahendra Pyndiah, F. van den Bogaart
Abstract
We present a multioctave MMIC active isolator (1–20 GHz) requiring only two fidd-effect transistors (MESFETs or HEMTs) and exhibiting more than 20 dB input return loss, 18 dB output return loss with more than 20 dB reverse loss and less than 9 dB transmission loss.
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We present a multioctave MMIC active isolator (1–20 GHz) requiring only two fidd-effect transistors (MESFETs or HEMTs) and exhibiting more than 20 dB input return loss, 18 dB output return loss with more than 20 dB reverse loss and less than 9 dB transmission loss.
Key concepts: Monolithic microwave integrated circuit, Return loss, Isolator, Insertion loss, Materials science, Electrical engineering, Transistor, Transmission loss