2013•Unpublished venueRequires access

Structural properties of silicon oxide prepared by high-power PECVD

Denis I. Sidorov, Sergey S. Mushinsky, D. I. Shevtsov

Abstract

The paper presents results of structure analysis of silicon oxide films prepared by plasma enhanced chemical vapor deposition (PECVD) methods with a high power plasma excitation. The films were deposited from hexamethyldisilazane and oxygen mixture. Dependences on deposition parameters are presented.

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Key concepts: Plasma-enhanced chemical vapor deposition, Silicon oxide, Silicon, Materials science, Chemical vapor deposition, Oxide, Oxygen, Plasma