1953•Journal of the Physical Society of JapanRequires access
Direct Current Characteristics of the Selenium Rectifier I. Theory of Rectification
Masami Tomono
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Abstract
On the assumption that the barrier layer of the selenium rectifier has a construction composed of n-type semiconductor, insulating film and p-type semiconductor, the author has offered a new rectification theory. In this theory, the author contrived a structure with which the direction of rectification due to insulating film does not come out to be inverse to the result of experiment, as Wilson's theory.