2012•Solid-State ElectronicsRequires access

Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

H. Aziza, Jean‐Michel Portal, J. Plantier, C. Reliaud, A. Régnier, J.-L. Ogier

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Key concepts: Data retention, Retention time, Memory retention, Reliability (semiconductor), SILC, Stress (linguistics), Overhead (engineering), Electric field

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