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2010•IEEE Electron Device LettersRequires access

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

Daniele Ielmini, Federico Nardi, C. Cagli, Andrea Leonardo Lacaita

Open publisher page 125 citations

Abstract

NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.

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What this paper is about

NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.

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OpenAlex reports 125 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.

Key concepts: Resistive random-access memory, Data retention, Reset (finance), Non-volatile memory, Non-blocking I/O, Reliability (semiconductor), Retention time, Materials science

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