2011•Integrated ferroelectricsRequires access

Sonos Nonvolatile Memory Cell Programming Characteristics

Todd C. Macleod, Thomas A. Phillips, Fat D. Ho

Abstract

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization.

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Available abstract

Key concepts: EEPROM, Non-volatile memory, Charge trap flash, Materials science, Flash memory, Optoelectronics, Flash (photography), Quantum tunnelling