2002•Unpublished venueRequires access

The emitter-controlled thyristor (ECT)-a new MOS gate controlled thyristor

Bo Zhang, Alex Q. Huang

Abstract

The Forward Biased Safe Operating Area (FBSOA) and the Reverse Biased Safe Operating Area (RBSOA) of the new Emitter-Controlled thyristor (ECT) are studied. The high-voltage current saturation mechanism and the turn-off failure mechanism of the ECT are analyzed. It is demonstrated that the ECT has superior FBSOA and RBSOA compared with the IGBT and other known MOS gated thyristors.

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Available abstract

Key concepts: Thyristor, MOS-controlled thyristor, Integrated gate-commutated thyristor, Static induction thyristor, Gate turn-off thyristor, Safe operating area, Common emitter, Electrical engineering