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1976•IEEE Transactions on Electron DevicesRequires access

High-voltage high-power gate-assisted turn-off thyristor for high-frequency use

Junichi Shimizu, Hisao Oka, Shigeru Funakawa, Hiroshi Gamo, Takuya Iida, Akira Kawakami

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Abstract

The fast switching thyristor with an integrated rectifier-diode connected in antiparallel to the cathode-emitter junction of auxiliary thyristor has been made. This thyristor has the ratings of blocking voltage 1200 V, average current 400 A. The turn-off time of less than 6 µs can be obtained by applying -10 V gate bias. It has the interdigitated gate structure and the high-frequency current rating more than 500 A at 10 kHz.

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What this paper is about

The fast switching thyristor with an integrated rectifier-diode connected in antiparallel to the cathode-emitter junction of auxiliary thyristor has been made. This thyristor has the ratings of blocking voltage 1200 V, average current 400 A. The turn-off time of less than 6 µs can be obtained by applying -10 V gate bias. It has the interdigitated gate structure and the high-frequency current rating more than 500 A at 10 kHz.

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OpenAlex reports 9 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The fast switching thyristor with an integrated rectifier-diode connected in antiparallel to the cathode-emitter junction of auxiliary thyristor has been made. This thyristor has the ratings of blocking voltage 1200 V, average current 400 A. The turn-off time of less than 6 µs can be obtained by applying -10 V gate bias. It has the interdigitated gate structure and the high-frequency current rating more than 500 A at 10 kHz.

Key concepts: Thyristor, Gate turn-off thyristor, Static induction thyristor, Integrated gate-commutated thyristor, MOS-controlled thyristor, Antiparallel (mathematics), Electrical engineering, Thyristor drive

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