2007•Unpublished venueRequires access
A Design of Novel Gate Driver in Sithyristor for Pulsed Power Switching
Bongseong Kim, Kwang-Cheol Ko, Eiki Hotta
Open publisher page 2 citations
Abstract
Summary form only given. A current topic of static induction thyristor (Sl-thyristor) as a pulsed power application is eliminating the remained charges, which originate from large amount of on-state current through the internal structure of Sl-thyristor when transient off switching phase is in processing. Due to the remained charges in Sl-thyristor, it makes SI-thyristor to be limited in high repetitive operation and to be failed turn-off switching if the turn-off switching time is more faster than 2kV/mus. Inductive energy storage (IES) type of gate driving technique has been proposed and improved turn-off switching characteristics over 55kV/mus to solve these problems, but the IKS type of gate driver is impossible to connect SI-Thyristor in series connection. Thus, manufacture of pulsed power systems that are used in SI-Thyristor with IES gate driving technique is very complicated and needed more components in comparison with pulsed power systems that adopt series connection of SI-thyristor. In this paper, an equivalent circuit model of SI-Thyristor to calculate the remained charges from steady on-state to transient off switching phase at SI-Thyristor is proposed. Also, it is proposed newly developed gate driver of SI-Thyristor to eliminate the remained charges effectively based on the equivalent model of SI-Thyristor is verified by comparative switching experiments that are carried out through several kind charge elimination method in SI-Thyristor. It turns out and estimates that the proposed equivalent circuit model of SI-Thyristor is simple and accurate to consider recovery processing and on-state energy loss of SI-Thyristor such application as beam kicker that requires large switched current within short pulse width less than 3mus. It also reveals that SI-Thyristor with the proposed gate driver show more faster turn-on (less than 5kV/mus) and turn-off switching time(less than 5kV/60ns) than conventional gate drivers by comparative experiment.