1986•Symposium on VLSI TechnologyRequires access

Analysis of Submicron MOS Device Characteristics Using a Composite Full Three-Dimensional Process/Device Simulation System

Shinji Onga, N. Shigyo, M. Yoshimi, Kenji Taniguchi

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Key concepts: Process (computing), Composite number, Materials science, Computer science, Electronic engineering, Engineering, Composite material, Operating system

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Analysis of Submicron MOS Device Characteristics Using a Composite Full Three-Dimensional Process/Device Simulation System — Research Paper | ScholarLens