1990•European Solid-State Device Research ConferenceRequires access

A charge and capacitance model for modern MOSFETs

Theo Smedes, François M. Klaassen

Abstract

A new physical, compact charge and capacitance model for long to submicron size MOSFETs is presented. It includes the important short channel effects and the effets of parasitic elements present in modern MOSFETs. The model is compared with numerical device simulations and measurements on actual devices. Good agreement is found between modelling, simulation and measurement.

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Available abstract

Key concepts: Capacitance, MOSFET, Parasitic capacitance, Semiconductor device modeling, Charge (physics), Electronic engineering, Materials science, Optoelectronics