2002•Unpublished venueRequires access

Application of semiclassical device simulation to trade-off studies for sub-0.1 μm MOSFETs

C. Fiegna, Hiroshi Iwai, Masayuki SAITO, Enrico Sangiorgi

Abstract

In this paper applicability of established semiclassical (SC) simulation techniques to ultra-short gate MOS devices is discussed and comparisons between experimental data of MOS transistors with gate down to 40 nm and simulation results are reported. Finally, examples of applications to the comparison of different device structures are reported.>

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Key concepts: Semiclassical physics, Transistor, Computer science, MOSFET, Electrical engineering, Physics, Engineering, Quantum mechanics