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Bulk ternary indium phosphide arsenide, InP/sub 1-x/As/sub x/: growth and characterization

W. A. Bonner

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Abstract

In(P,As) bulk ternary single crystal growth has been demonstrated using the liquid encapsulated Czochralski (LEC) technique with both InP and ternary In(P,As) seeds. Arsenic concentrations to nominally 10% have been achieved. While problems related to cracking and compositional uniformity exist, the single crystals are capable of producing wafers and bulk material for characterization and preliminary device studies. Optical and electrical measurements are reported.

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What this paper is about

In(P,As) bulk ternary single crystal growth has been demonstrated using the liquid encapsulated Czochralski (LEC) technique with both InP and ternary In(P,As) seeds. Arsenic concentrations to nominally 10% have been achieved. While problems related to cracking and compositional uniformity exist, the single crystals are capable of producing wafers and bulk material for characterization and preliminary device studies. Optical and electrical measurements are reported.

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Available abstract

In(P,As) bulk ternary single crystal growth has been demonstrated using the liquid encapsulated Czochralski (LEC) technique with both InP and ternary In(P,As) seeds. Arsenic concentrations to nominally 10% have been achieved. While problems related to cracking and compositional uniformity exist, the single crystals are capable of producing wafers and bulk material for characterization and preliminary device studies. Optical and electrical measurements are reported.

Key concepts: Indium phosphide, Ternary operation, Arsenide, Materials science, Gallium arsenide, Characterization (materials science), Phosphide, Indium

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