2004•IEE Proceedings - Circuits Devices and SystemsRequires access

Advanced electrothermal Spice modelling of large power IGBTs

R. Azar, Florin Udrea, Wai Tung Ng, F.P. Dawson, W. Findlay, P. Waind, G.A.J. Amaratunga

Abstract

A novel IGBT electrothermal model is implemented for the first time in PSpice for the simulation of steady state and transient temperature dependent IGBT operation including self-heating and latchup. A thermal circuit representing the characteristics of the IGBT package is developed and validated against a finite element model and experimental results. A novel electrical IGBT model based on the Kraus model is developed to account for the electrical impact of instantaneous junction temperature variations owing to self-heating. The resulting electrothermal model is validated against experimental DC and transient FBSOA measurements.

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Key concepts: Insulated-gate bipolar transistor, Spice, Transient (computer programming), Junction temperature, Power (physics), Steady state (chemistry), Thermal, Electrical engineering