2002•Unpublished venueRequires access

Parameter extraction for the static and dynamic model of IGBT

Han‐Soo Kim, Young‐Ho Cho, Il-Jung Kim, Y.-I. Choi

Abstract

An insulated gate bipolar transistor (IGBT) device model that can be easily implemented in SPICEII is proposed. The IGBT model parameters are extracted from the experimental results, which are easily obtained from the data book or terminal characteristic. The extracted parameters using this model are to simulate the dynamic IGBT model as well as the steady state model.>

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Available abstract

Key concepts: Spice, Insulated-gate bipolar transistor, Computer science, Electronic engineering, Electrical engineering, Engineering, Voltage