ScholarLens Back to search
1961•OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)Requires access

SOME DATA ON THE ACTIVATION ANALYSIS OF HIGH PURITY SILICON

M. Oerdoegh, V. Upor-Juvancz

Open publisher page 0 citations

Abstract

Polycrystalline silicon samples contaminated by Ta, Au, Cu, Ni, and Co were irradiated in a reactor at a neutron flux of 10/sup 13/ n/cm/sup 2//sec with an exposure time chosen so that measurable quantities of most impurities assumed to be present could be obtained. The method, which can be used for the determination of most impurities in silicon, is very rapid, accurate, highly sensitive, and specific. It can be used very well to determine impurities in semiconductors. (auth)

About this research paper

What this paper is about

Polycrystalline silicon samples contaminated by Ta, Au, Cu, Ni, and Co were irradiated in a reactor at a neutron flux of 10/sup 13/ n/cm/sup 2//sec with an exposure time chosen so that measurable quantities of most impurities assumed to be present could be obtained. The method, which can be used for the determination of most impurities in silicon, is very rapid, accurate, highly sensitive, and specific. It can be used very well to determine impurities in semiconductors. (auth)

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Polycrystalline silicon samples contaminated by Ta, Au, Cu, Ni, and Co were irradiated in a reactor at a neutron flux of 10/sup 13/ n/cm/sup 2//sec with an exposure time chosen so that measurable quantities of most impurities assumed to be present could be obtained. The method, which can be used for the determination of most impurities in silicon, is very rapid, accurate, highly sensitive, and specific. It can be used very well to determine impurities in semiconductors. (auth)

Key concepts: Impurity, Silicon, Neutron activation analysis, Radiochemistry, Semiconductor, Materials science, Neutron flux, Analytical Chemistry (journal)

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
SOME DATA ON THE ACTIVATION ANALYSIS OF HIGH PURITY SILICON — Research Paper | ScholarLens