1960•OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)Requires access
DETERMINATION OF MICRO-IMPURITIES CONTAINED IN SILICON BY THE GAMMA-SPECTRA OF THEIR RADIOACTIVE ISOTOPES
K.I. Erokhina, И.Х. Лемберг, I.E. Makasheva, I.A. Maslov, A.P. Obukhov
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Abstract
In searching for a method for determining the impurities in silicon semiconductors without dependence on the purity of the reagents used, the gamma radiation of activated isotopes was found to present good promise. The linear character f the gamma spectra obtained with a scintillation spectrometer allowed qualitative and quantitative determination of the impurity elements. The samples were activated by exposing them to a thermal neutron flux of about 9 x 10/ sup 12/ neutrons/ cm/sup -2//sec/sup -1/. The presence of a number of elements in concentrations down to 10/sup -7/% was thus established in highpurity silicon samples. The sensitivity of the method allowed the determination of amounts of certain elements as small as 10/sup -11/ g. As no preliminary chemical separation is necessary. the method could be used for quality control of semiconductor samples. (TTT)