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An Internal‐Standard Method for Determination of Trace Impurities in Semiconductor Grade Silicon by Neutron Activation Analysis

Chi‐Chiang Chou, Tong‐Chuin Pung, Hui‐Tuh Tsai, Shaw‐Chii Wu

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Abstract

Abstract An internal‐standard method1–4) has been applied for the determination of La, Sb, Au, Cr and Ag in silicon single‐crystal by neutron activation analysis using cobalt as an internal‐standard element. No chemical separation is required in this case and the precision obtained with the present method is satisfactory.

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Abstract An internal‐standard method1–4) has been applied for the determination of La, Sb, Au, Cr and Ag in silicon single‐crystal by neutron activation analysis using cobalt as an internal‐standard element. No chemical separation is required in this case and the precision obtained with the present method is satisfactory.

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Available abstract

Abstract An internal‐standard method1–4) has been applied for the determination of La, Sb, Au, Cr and Ag in silicon single‐crystal by neutron activation analysis using cobalt as an internal‐standard element. No chemical separation is required in this case and the precision obtained with the present method is satisfactory.

Key concepts: Chemistry, Neutron activation analysis, Silicon, Internal standard, Impurity, Semiconductor, TRACE (psycholinguistics), Analytical Chemistry (journal)

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