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2010•International Symposium on Power Semiconductor Devices and IC'sRequires access

A novel low-voltage trench power MOSFET with improved avalanche capability

Jacky C. W. Ng, J.K.O. Sin, Hitoshi Sumida, Yoshiaki Toyoda, Akihiko Ohi, Hirohisa Tanaka, T. Nishimura, Katsunori Ueno

Open publisher page 15 citations

Abstract

In this paper, a novel trench power MOSFET with improved avalanche capability and specific on-resistance is presented. The novel device is fabricated along with the conventional trench power MOSFET for comparison. The avalanche current of the novel device is improved by 30% because the n+-source/p-body junction in the structure is minimized. Moreover, the specific on-resistance is reduced by 32% due to the smaller pitch of the novel device. The measured breakdown voltage of the devices is approximately 54 V.

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What this paper is about

In this paper, a novel trench power MOSFET with improved avalanche capability and specific on-resistance is presented. The novel device is fabricated along with the conventional trench power MOSFET for comparison. The avalanche current of the novel device is improved by 30% because the n+-source/p-body junction in the structure is minimized. Moreover, the specific on-resistance is reduced by 32% due to the smaller pitch of the novel device. The measured breakdown voltage of the devices is approximately 54 V.

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OpenAlex reports 15 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper, a novel trench power MOSFET with improved avalanche capability and specific on-resistance is presented. The novel device is fabricated along with the conventional trench power MOSFET for comparison. The avalanche current of the novel device is improved by 30% because the n+-source/p-body junction in the structure is minimized. Moreover, the specific on-resistance is reduced by 32% due to the smaller pitch of the novel device. The measured breakdown voltage of the devices is approximately 54 V.

Key concepts: Trench, Power MOSFET, Breakdown voltage, MOSFET, Avalanche breakdown, Materials science, Optoelectronics, Avalanche diode

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