2002•Unpublished venueRequires access

A new power MOSFET having excellent avalanche capability

Tsutomu Uesugi, Tomiko M. Suzuki, T. Murata, Sachiko Kawaji, Hiroto Tadano

Abstract

In this paper, we explore a new concept for improvement of an avalanche capability of a power MOSFET. The concept is to make parasitic bipolar transistors in all over the chip turn on, and to suppress breakdown current crowding. The avalanche capability of an UMOSFET applied this new concept was 1500 mJ. This value was about one order higher than that of a conventional UMOSFET.

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Available abstract

Key concepts: Power MOSFET, MOSFET, Current crowding, Power semiconductor device, Transistor, Avalanche breakdown, Electrical engineering, Power (physics)