Pseudomorphic stabilization of diamond on non-diamond substrates
Alberto Argoitia, John C. Angus, Long Wang, Walter R. L. Lambrecht
Abstract
Alberto Argoitia, John C. Angus, Long Wang, Walter R. L. Lambrecht
Abstract
First principles electronic structure calculations and high resolution transmission electron microscopy were used to study the interface of diamond with beryllium oxide (BeO) and cubic boron nitride (c-BN). These are the tetrahedrally coordinated, covalently bonded solids that are most closely lattice-matched to diamond. The theoretical results indicate that diamond should adhere strongly to both BeO and c-BN. Diamond deposited on the Be terminated (0001) surfaces of BeO by hot-filament assisted deposition showed local epitaxy of isolated diamond crystals. Parallel epitaxy of diamond films was achieved on the B terminated (111) surfaces of c-BN. Diamond, Beryllium oxide, Cubic boron nitride, Heteroepitaxy, Chemical vapor deposition.
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First principles electronic structure calculations and high resolution transmission electron microscopy were used to study the interface of diamond with beryllium oxide (BeO) and cubic boron nitride (c-BN). These are the tetrahedrally coordinated, covalently bonded solids that are most closely lattice-matched to diamond. The theoretical results indicate that diamond should adhere strongly to both BeO and c-BN. Diamond deposited on the Be terminated (0001) surfaces of BeO by hot-filament assisted deposition showed local epitaxy of isolated diamond crystals. Parallel epitaxy of diamond films was achieved on the B terminated (111) surfaces of c-BN. Diamond, Beryllium oxide, Cubic boron nitride, Heteroepitaxy, Chemical vapor deposition.
Key concepts: Diamond, Beryllium oxide, Boron nitride, Material properties of diamond, Chemical vapor deposition, Materials science, Beryllium, Epitaxy