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Pseudomorphic Stabilization of Diamond on Non-Diamond Substrates. Part 1. Diamond Grown on Single Crystal Beryllium Oxide. Part 2. Anomalous Band Gap Behavior and Phase Stability of c-BN/Diamond Alloys

Alberto Argoitia, John C. Angus, L. Wang, Xiajie I. Ning, P. Pirouz

Abstract

Diamond was grown on single crystal beryllium oxide by hot-filament chemical vapor deposition. Individual diamond crystals grew epitaxially on the basal plane of BeO with the epitaxial relationship: (111)diamond // (0001) and < 1 1 0 >diamond rotated by less than 6 deg from < 1150 > BeO. Electronic structure calculations of mixed crystals of c-BN and diamond show pronounced band gap bowing. The calculations predict only very limited mutual solubility in the solid state.

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Key concepts: Diamond, Beryllium oxide, Chemical vapor deposition, Materials science, Material properties of diamond, Epitaxy, Beryllium, Crystal (programming language)