1998•International Workshop on Physics of Semiconductor DevicesRequires access
Evaluation of the GaAs Schottky diode parameters
P. Jayavel, S. Arulkumaran, N. Dharmarasu, R. Radhakrishnan Sumathi, J. Kumar
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Abstract
Forward Current - Voltage (I-V) characteristics is generally used to evaluate the Schottky Barrier Diode parameters namely, barrier height (o B ), ideality factor (n) and series resistance (R s ). This method requires a linear region (V>3kT/q) in the In(I) versus V plot. when a metal-semiconductor contact exhibits relatively high series resistance, it is difficult to determine a linear region in the forward In(I)- V characteristics. In this present study, an attempt has been made to evaluate the Schottky diode parameters using Schottky Barrier Height Distribution method. This approach is used either in the whole bias or only in the reverse bias range. Pd/n-GaAs Schottky barrier diodes have been used for the present investigations. The theoretical and experimental values have been compared and discussed.