ScholarLens Back to search
1986•Semiconductor Science and TechnologyRequires access

Limitations to the Norde I-V plot

A. B. McLean

Open publisher page 14 citations

Abstract

It has already been demonstrated that by plotting the current-voltage characteristics of Schottky diodes using the function F(V)=V/2-( beta ) -1 ln (I/SA**T 2 ) it is possible to obtain an estimate of the Schottky barrier height in the presence of a large semiconductor series resistance. It is demonstrated in this letter that the accuracy of this technique is reduced if there is an appreciable recombination contribution to the forward current or if the Schottky barrier height is voltage dependent.

About this research paper

What this paper is about

It has already been demonstrated that by plotting the current-voltage characteristics of Schottky diodes using the function F(V)=V/2-( beta ) -1 ln (I/SA**T 2 ) it is possible to obtain an estimate of the Schottky barrier height in the presence of a large semiconductor series resistance. It is demonstrated in this letter that the accuracy of this technique is reduced if there is an appreciable recombination contribution to the forward current or if the Schottky barrier height is voltage dependent.

Why it matters

OpenAlex reports 14 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

It has already been demonstrated that by plotting the current-voltage characteristics of Schottky diodes using the function F(V)=V/2-( beta ) -1 ln (I/SA**T 2 ) it is possible to obtain an estimate of the Schottky barrier height in the presence of a large semiconductor series resistance. It is demonstrated in this letter that the accuracy of this technique is reduced if there is an appreciable recombination contribution to the forward current or if the Schottky barrier height is voltage dependent.

Key concepts: Schottky diode, Schottky barrier, Equivalent series resistance, Semiconductor, Diode, Voltage, Condensed matter physics, Current (fluid)

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Limitations to the Norde I-V plot — Research Paper | ScholarLens