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1994•AMS Acta (University of Bologna)Open access

A 12.5 GHz divide-by-eight prescaler in GaInP/GaAs HBT technology

S.J. Prasad, Haynes, C., B. Vetanen, I. Beers, S. Park

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Abstract

A fully integrated pre-amplifier and a static divide-by-eight prescaler clocking at 12.5GHz realized in a GaInP/GaAs HBT technology is presented. The HBT process incorporates Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. HBTs with emitter size of 3? x 10?. have current gains of 145 and fT and fmaxof 60GHz and 45GHz respectively. Unloaded ECL gate delays of 28ps are obtained from ring oscillator measurements.

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A fully integrated pre-amplifier and a static divide-by-eight prescaler clocking at 12.5GHz realized in a GaInP/GaAs HBT technology is presented. The HBT process incorporates Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. HBTs with emitter size of 3? x 10?. have current gains of 145 and fT and fmaxof 60GHz and 45GHz respectively. Unloaded ECL gate delays of 28ps are obtained from ring oscillator measurements.

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Available abstract

A fully integrated pre-amplifier and a static divide-by-eight prescaler clocking at 12.5GHz realized in a GaInP/GaAs HBT technology is presented. The HBT process incorporates Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. HBTs with emitter size of 3? x 10?. have current gains of 145 and fT and fmaxof 60GHz and 45GHz respectively. Unloaded ECL gate delays of 28ps are obtained from ring oscillator measurements.

Key concepts: Heterojunction bipolar transistor, Optoelectronics, Electrical engineering, Amplifier, Schottky diode, Materials science, Capacitor, Resistor

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