Quantum Mechanical Treatment on Modeling of Drain Current, Capacitances and Transconductances for Thin Film Undoped Symmetric DG MOSFETs

In this work we present a semi-analytical model for the current voltage and Capacitance-Voltage characteristics of nano scaled undoped symmetric double gate (DG) MOSFETs. This model uses a parabolic potential approximation for the body potential whose coordinate is normal or perpendicular to the interfaces in all regions of device operation. The carrier confinement phenomenon is considered and we calculate the surface electric field which is used to determine the inversion charge sheet density. The density is used in a compact classical model of the symmetric DG MOSFET as a core model. Quantum effects like the threshold voltage shift and increase in the effective oxide thickness are applied through some modifications to the core model. The results are verified by ATLAS device software. The comparison shows the high accuracy of the proposed model.