2002•Unpublished venueRequires access

LDMOS transistor for SMART POWER circuits: modeling and design

Diana Moncoqut, D. Farenc, P. Rossel, G. Charitat, H. Tranduc, James Victory, I. Pages

Abstract

This paper presents a compact model for circuit simulation. Physical properties and layout of the lateral MOSFET structure are considered. The model features a simple but accurate formulation of the drift resistance and the interelectrode capacitances. Experimental data characteristics are compared with simulated ones and very good agreement is found.

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Available abstract

Key concepts: LDMOS, Power MOSFET, Transistor, MOSFET, Electronic engineering, Electronic circuit, Simple (philosophy), Power semiconductor device