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Two lumped-charge based power MOSFET models

Yathavan Subramanian, Peter O. Lauritzen, K.R. Green

Open publisher page 6 citations

Abstract

This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model.

About this research paper

What this paper is about

This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model.

Key concepts: LDMOS, MOSFET, Power MOSFET, Power semiconductor device, Voltage, Power (physics), Electrical engineering, Semiconductor device modeling

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