1987•European Solid-State Device Research ConferenceRequires access
Statistical Measurements of PMOS Subthreshold Current for 1.3 to 0.5 Micron Channel Lengths
Thibault Douville, R. Basset, D. T. Amm, S. Ravezzani, P. Delpech, D. Moi, M. Paoli, Blandine Minghetti, H. Mingam
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Abstract
The threshold voltage and subthreshold current of micron and submicron PMOS devices have been investigated for both a classical n - well and a retrograde n - well process. The two processes show similar threshold voltage characteristics down to 0.5 micron but the subthreshold current is much improved for the retrograde process.