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Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) with low threshold voltage, high drive current, and uniform electrical characteristics

A. Yagishita, Tomohiro Saito, S. Inumiya, Kazuhiko Matsuo, Y. Tsunashima, K. Suguro, T. Arikado

Open publisher page 8 citations

Abstract

We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (0.7 V). By using this technology, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with mid-gap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).

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What this paper is about

We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (0.7 V). By using this technology, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with mid-gap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).

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OpenAlex reports 8 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (0.7 V). By using this technology, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with mid-gap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).

Key concepts: Threshold voltage, Copper interconnect, Metal gate, Materials science, Overdrive voltage, MOSFET, Electrical engineering, Subthreshold conduction

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