2003Unpublished venueRequires access

Silicon‐Germanium Heterojunction Bipolar Technology

P. Ashburn

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Abstract

This chapter contains sections titled: Introduction Differential Epitaxy Silicon-germanium HBT Process Selective Epitaxy Silicon-germanium HBT Process Silicon-germanium-carbon HBT Process Silicon-germanium HBT Process Using Germanium Implantation Radio Frequency Silicon-germanium BiCMOS Process References

About this research paper

What this paper is about

This chapter contains sections titled: Introduction Differential Epitaxy Silicon-germanium HBT Process Selective Epitaxy Silicon-germanium HBT Process Silicon-germanium-carbon HBT Process Silicon-germanium HBT Process Using Germanium Implantation Radio Frequency Silicon-germanium BiCMOS Process References

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Available abstract

This chapter contains sections titled: Introduction Differential Epitaxy Silicon-germanium HBT Process Selective Epitaxy Silicon-germanium HBT Process Silicon-germanium-carbon HBT Process Silicon-germanium HBT Process Using Germanium Implantation Radio Frequency Silicon-germanium BiCMOS Process References

Key concepts: Heterojunction bipolar transistor, Germanium, Silicon, Silicon-germanium, Materials science, Optoelectronics, Heterojunction, Epitaxy

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