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2005•Nuclear TechniquesRequires access

Electrical performance analysis of electron irradiated SiGe HBT and Si BJT

Qian Pei-xin, Meng Xiangti

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Abstract

The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, the collector current IC decreased while the base current IB did not change, and the current gain β decreased for SiGe HBT. For conventional Si BJT, both IC and IB increased and β decreased much more obviously than SiGe HBT at the same fluence. It was shown that SiGe HBT had a better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

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What this paper is about

The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, the collector current IC decreased while the base current IB did not change, and the current gain β decreased for SiGe HBT. For conventional Si BJT, both IC and IB increased and β decreased much more obviously than SiGe HBT at the same fluence. It was shown that SiGe HBT had a better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

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Available abstract

The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, the collector current IC decreased while the base current IB did not change, and the current gain β decreased for SiGe HBT. For conventional Si BJT, both IC and IB increased and β decreased much more obviously than SiGe HBT at the same fluence. It was shown that SiGe HBT had a better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

Key concepts: Heterojunction bipolar transistor, Bipolar junction transistor, Materials science, Irradiation, Optoelectronics, Heterojunction, Silicon-germanium, Heterostructure-emitter bipolar transistor

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