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2013•Environmental science and engineeringRequires access

Laser Molecular Beam Epitaxy Growth of GaN Layer on Sapphire (0001) Under Various Process Conditions

Sunil Singh Kushvaha, M. Senthil Kumar, Bipin Kumar Gupta, Kamlesh Kumar Maurya

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Key concepts: Sapphire, Materials science, Full width at half maximum, Molecular beam epitaxy, Epitaxy, Photoluminescence, Optoelectronics, Laser

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