1970Applied Physics LettersRequires access

EPITAXIAL ZnO ON SAPPHIRE

Giancarlo Galli, James Coker

Open publisher page 89 citations

Abstract

Epitaxial layers of ZnO have been deposited by chemical vapor transport on single-crystal sapphire substrates. The ZnO layers have been deposited up to thicknesses of 100μ. X-ray analysis showed that the c axis of the ZnO could be made to lie parallel to the (0112)-oriented sapphire substrate. Resistivities were generally from 1 to 10 Ω-cm but could be significantly increased by diffusion of lithium or sodium.

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What this paper is about

Epitaxial layers of ZnO have been deposited by chemical vapor transport on single-crystal sapphire substrates. The ZnO layers have been deposited up to thicknesses of 100μ. X-ray analysis showed that the c axis of the ZnO could be made to lie parallel to the (0112)-oriented sapphire substrate. Resistivities were generally from 1 to 10 Ω-cm but could be significantly increased by diffusion of lithium or sodium.

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Available abstract

Epitaxial layers of ZnO have been deposited by chemical vapor transport on single-crystal sapphire substrates. The ZnO layers have been deposited up to thicknesses of 100μ. X-ray analysis showed that the c axis of the ZnO could be made to lie parallel to the (0112)-oriented sapphire substrate. Resistivities were generally from 1 to 10 Ω-cm but could be significantly increased by diffusion of lithium or sodium.

Key concepts: Sapphire, Epitaxy, Materials science, Substrate (aquarium), Lithium (medication), Diffusion, Crystal (programming language), Chemical vapor deposition

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