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2005•Journal of Crystal GrowthRequires access

Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates

Jia-Ching Lin, Yan Kuin Su, Sue-Joan Chang, W.R. Chen, R. Y. Chen, Yingchun Cheng, Lu‐Yin Lin

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Key concepts: Epitaxy, Sapphire, Vicinal, Substrate (aquarium), Layer (electronics), Materials science, Acceptor, Activation energy

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