Analysis of Ultra Pure Sulfuric Acid for Semiconductor Using High Resolution ICP-MS
Young-Woo Heo, J.I. GiI, Heon-Sung Lim
Abstract
Young-Woo Heo, J.I. GiI, Heon-Sung Lim
Abstract
Ultra trace metal impurities of high-purity sulfuric acid for semiconductor process have been determined in the concentration of lower than ppb (ng/g) level using high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS).The acid samples were evaporated and concentrated by the factor of 20. No clement in the acids exceeded 1ppb level and most of the clements were determined below 10ppt (pg/g). Elements without spectral interference in mass spectrum, such as In, V, Mn, etc, were determined in the concentration of below 1 ppt level The recoveries in the range of 72% to 127.2% for 0.5 ppb spiked sample were obtained.
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Ultra trace metal impurities of high-purity sulfuric acid for semiconductor process have been determined in the concentration of lower than ppb (ng/g) level using high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS).The acid samples were evaporated and concentrated by the factor of 20. No clement in the acids exceeded 1ppb level and most of the clements were determined below 10ppt (pg/g). Elements without spectral interference in mass spectrum, such as In, V, Mn, etc, were determined in the concentration of below 1 ppt level The recoveries in the range of 72% to 127.2% for 0.5 ppb spiked sample were obtained.
Key concepts: Sulfuric acid, Inductively coupled plasma mass spectrometry, Analytical Chemistry (journal), Resolution (logic), Chemistry, Impurity, Inductively coupled plasma, Mass spectrometry