ScholarLens Back to search
1999•Journal of the Korean Institute of Electrical and Electronic Material EngineersRequires access

A Study of TiN/Zr(N)/TiN Multilayer Films as a Diffusion Barrier between Cu and Si

Chang-Jo Kim, Byung-Chul Cho, Jwa-Yeon Kim, Eui‐Jung Yun, Jae-Gap Lee

Open publisher page 0 citations

Abstract

New TiN/Zr(N)/TiN multilayer structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. The TiN/ZrN/TiN structure has a good electrical, diffusion and adhesion properties between Cu and Si compared with those of TiN layer and TiN/Zr/TiN structure. In Cu/TiN/ZrN/TiN/Si structure, any reaction between Cu and Si up to 700 for 30min. was not observed, and adhesion properties were enhanced as increasing of ZrN thickness(total thickness of TiN/ZrN/TiN barrier layer : 1000, thickness of Cu layer : 3000). Each layer was deposited using DC/RF magnetron sputtering system at room temperature. The effectiveness of TiN/Zr(N)/TiN structure as a diffusion barrier and adhesion against Cu layer were explored using XRD, AES and SEM technologies.

About this research paper

What this paper is about

New TiN/Zr(N)/TiN multilayer structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. The TiN/ZrN/TiN structure has a good electrical, diffusion and adhesion properties between Cu and Si compared with those of TiN layer and TiN/Zr/TiN structure. In Cu/TiN/ZrN/TiN/Si structure, any reaction between Cu and Si up to 700 for 30min. was not observed, and adhesion properties were enhanced as increasing of ZrN thickness(total thickness of TiN/ZrN/TiN barrier layer : 1000, thickness of Cu layer : 3000). Each layer was deposited using DC/RF magnetron sputtering system at room temperature. The effectiveness of TiN/Zr(N)/TiN structure as a diffusion barrier and adhesion against Cu layer were explored using XRD, AES and SEM technologies.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

New TiN/Zr(N)/TiN multilayer structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. The TiN/ZrN/TiN structure has a good electrical, diffusion and adhesion properties between Cu and Si compared with those of TiN layer and TiN/Zr/TiN structure. In Cu/TiN/ZrN/TiN/Si structure, any reaction between Cu and Si up to 700 for 30min. was not observed, and adhesion properties were enhanced as increasing of ZrN thickness(total thickness of TiN/ZrN/TiN barrier layer : 1000, thickness of Cu layer : 3000). Each layer was deposited using DC/RF magnetron sputtering system at room temperature. The effectiveness of TiN/Zr(N)/TiN structure as a diffusion barrier and adhesion against Cu layer were explored using XRD, AES and SEM technologies.

Key concepts: Tin, Materials science, Diffusion barrier, Layer (electronics), Barrier layer, Diffusion, Metallurgy, Sputtering

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
A Study of TiN/Zr(N)/TiN Multilayer Films as a Diffusion Barrier between Cu and Si — Research Paper | ScholarLens