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Ion implantation: stopping and the range of ions in solids

J. Cely

Abstract

The review deals with the energy losses of ions (with energy in keV region) moving in an amorphous or single crystal target and with the theory of the range and range straggling of ions. Less attention is paid to the computer simulation of ion implantation and to the methods of range distribution measurements. Illustrative examples are predominantly chosen from the field of ion implantation in seniiconductors. (auth)

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Key concepts: Ion, Range (aeronautics), Ion implantation, Atomic physics, Amorphous solid, Materials science, Crystal (programming language), Energy (signal processing)