Ion implantation in semiconductors : science and technology : proceedings of the fourth International Conference on Ion Implantation in Semiconductors and Other Materials, held at the Osaka Chamber of Commerce and Industry, August 1974

III-V Compound Semiconductors I.- Ion Implantation in III-V Compounds.- Anodic Oxidation and Profile Determination of Ion Implanted Semi-insulating GaAs.- Encapsulation of Ion Implanted GaAs.- Ion Implantation of Cd and Te in GaAs Crystals.- Implantation of Silicon into Gallium Arsenide.- The Effects of Ion Dose and Implantation Temperature on Enhanced Diffusion in Selenium Ion-Implanted Gallium Arsenide.- III-V Compound Semiconductors II.- The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0.6P0.4.- Compensating Layers in GaAs by Ion Implantation: Application to Integrated Optics.- Electrical Properties of Proton Bombarded N-type GaAs.- Photoluminescence of Zinc Implanted n-type GaAs.- Large Increase of Emission Efficiency in Indirect GaAsP by N-Ion Implantation.- Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38.- Defect-Free Nitrogen Implantation into GaP.- Ion Implantations of Mg and Zn into n-type GaP.- In-Depth Profile Detection Limits of Nitrogen in GaP, Nitrogen, Oxygen and Fluorine in Si by SIMS and AES.- Behaviors of Ga and P Damages Introduced by Ion-Implantation into GaP.- ESR Studies of Annealing Behavior of Nitrogen-Implanted GaP.- Profiles.- Profiles How Well Can Experimental Results be Explained by Theories?.- Measurement of Arsenic Implantation Profiles in Silicon Using an Electron Spectroscopic Technique.- Atom and Carrier Profiles in As Implanted Si.- The Influence of Postprocessing on the Electrical Behavior of Implanted Arsenic Distributions in Silicon.- Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy.- Deviated Gaussian Profiles of Implanted Boron and Deep Levels in Silicon.- Redistribution of Boron in Silicon Through High Temperature Proton Irradiation.- Range Distributions of Boron in Silicon Dioxide and the Underlying Silicon Substrate.- Redistribution of Background Impurities in Silicon Induced by Ion Implantation and Annealing.- Implantation of Boron and Lithium in Semiconductors and Metals.- Influence of Annealing and Radiation Damage on Electrical Carriers Profiles in Phosphorus Implanted Silicon Along the |110| Axis.- II-VI Compound Semiconductors and Other Materials.- Ion Implantation of As in CdTe: Electrical Characteristics and Radiation Damage.- Direct Measurement of Impurity and Damage Distribution in Ion Implanted ZnTe by Cathodo and Photoluminescence.- Properties of Al and P Ion-Implanted Layers in ZnSe.- N-Ion Implantation into ZnSe.- Energy Level Analysis of N+ Ions Implanted CdS.- Deep Penetration of Implanted Po in CdS.- ZnS:Mn DC Electroluminescent Cells by Ion Implantation Techniques.- Ion-Bombardment-Induced Surface Expansion of Solids.- Nitrogen Implantation in SiC: Lattice Disorder and Foreign-Atom Location Studies.- Metals.- Enhancement of the Superconducting Transition Temperature by Ion Implantation in Aluminium Thin Films.- The Influence of Heavy Ion Bombardment on the Superconducting Transition Temperature of Thin Films.- Chemical Aspects of Ion Implantation.- Ion Impact Chemistry in Thin Metal Films Argon Oxygen and Nitrogen Bombardment of Tantalum.- Iron Surface Treatment by Boron Implantation.- Ionized-Cluster Beam Deposition.- Effects of Ion Bombardment on Metal-Silicon Interface.- Lattice Location of Deuterium Implanted into W and Cr.- The Formation of Substitutional Alloys in fcc Metals by High Dose Implantations.- The Effect of Ion Implantation on the Corrosion Behaviour of Fe.- A Rutherford Backscattering and Channeling Study of Dy Implanted into Single Crystal Ni.- Radiation Damage I.- Defect Production in Semiconductors.- Transport of Ion Deposited Energy by Recoiling Target Atoms.- Ion Implantation Through Surface Layers: A Truncated Gaussian Model.- The Effects of Non-Gaussian Range Statistics on Energy Deposition Profiles.- Projected Range Distribution of Implanted Ions in a Double-Layer Substrate.- Generation of Knock-Ons in Solids Bombarded with Energetic Ions and Energy Partition Relations.- Defects in Ion Implanted SiO2 Layers on Si.- Secondary Defects in Boron Implanted Silicon.- Ternary Defects Resulting from the Implantation of B, F, BF and BF2 Ions into Silicon, Their Formation and Effect Upon Device Properties.- Techniques for Studying Ion Implantation in Diamond.- The Characterization of Implanted Layers Using the Conductivity Modulation Effect.- Radiation Damage II.- Backscattering and ESR Studies in Heavily Damaged Layer.- On the Determination of Defects Distribution in Implanted Layers by Means of Backscattering Technique.- The Use of Molecular Ions for Implantation Studies in Si and Ge.- Damage Production and Annealing in Implanted Silicon as Studied by Optical Reflectivity Profiling.- Displacement Damage in Ne Implanted Magnesium Oxide.- An EPR Study on High Energy Ion Implanted Silicon.- ESR Line Width of Conduction Electrons in P+ Ion Implanted Si.- ESR Studies on Annealing Behavior of Heavily Damaged Silicon.- ESR Studies of Ion Implanted Si-SiO2 Structure.- Recovery of Silicon Layers Damaged by Low Energy Ion Bombardment.- High Dose Implantation.- Electrical Behaviour of Heavily-Doped Ion Implanted Layers in Silicon.- High Dose Phosphorus-Germanium Double Implantation in Silicon.- Control of Secondary Defects by Tin Diffusion in Ion Implanted Silicon Crystals.- Chemical Composition of High Dose Implants in Silicon and Germanium.- An Experimental Equipment for Ion Implantation.- Devices I.- Ion Implantation into Polycrystalline Silicon.- Ion Implantation of Impurities into Polycrystalline Silicon.- The Effect of Proton Bombardment on Porous Silicon Formation.- P-Type Doping Observed in Silicon Implanted with High Energy Carbon Ions.- Negative and Anisotropic Magnetoresistance in Phosphorus Implanted Silicon.- Enhanced Residual Disorder in Silicon from Recoil Implantation of Oxygen and Nitrogen by Arsenic Implants Through Dielectric Layers.- An Analysis of Arsenic Ion Implantation for Use in Silicon Bipolar Devices.- Ion-Implanted Profiles for High-Frequency (>100GHz) Impatt Diodes.- Noise Characteristics in the Low Frequency Range of Ion-Implanted-Base-Transistor (NPN TYPE).- Devices II.- The Measurement of Doping Uniformity in Ion Implanted Wafers.- Stress Adjustment in SI3N4 Films by Ion Implantation.- Enhanced Oxidation of Silicon by Ion Implantation and its Novel Applications.- Ion Implanted Buried Layers Applied for Nuclear Detector Telescopes.- Limitations of the C-V Technique for Ion-Implanted Profiles.- Gold Implantation in Silicon: MOS C-V Characterization.- Threshold Voltage Shift of MOS-Transistors by Ion Implantation of B, Al, Ga, P and As.- Noise Characteristics of Ion-Implanted MOS Transistors.- Implantation Profile and Buried-Channel Depth in Ion Implanted MIS Structures.- Electrical Behavior of Boron-Implanted MOS Transistor.- List of Authors.