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2023•SID Symposium Digest of Technical PapersRequires access

51‐3: Copper Thin Film Dry Etching Equipment via ECR Plasma Source

Jin Nyoung Jang, Jong‐Hwa Lee, Jae Hoon Jung, Kiro Jung, Sangheon Lee, Donghoon Kim, MunPyo Hong, S.G. Kim, Soo Ouk Jang, Chiwoo Kim

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Abstract

This paper presents Gen. 2 (370 mm * 470 mm) size thin copper film dry etching performance that is etched by high electron temperature plasma source with low temperature substrate. Dry etching is performed using HCl gas in a reactive ion etching mode. In addition, scanning low temperature susceptor and the electron cyclotron resonance (ECR) plasma produced by rectangular‐type microwave slot antenna (ReSLAN) are used.

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What this paper is about

This paper presents Gen. 2 (370 mm * 470 mm) size thin copper film dry etching performance that is etched by high electron temperature plasma source with low temperature substrate. Dry etching is performed using HCl gas in a reactive ion etching mode. In addition, scanning low temperature susceptor and the electron cyclotron resonance (ECR) plasma produced by rectangular‐type microwave slot antenna (ReSLAN) are used.

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Available abstract

This paper presents Gen. 2 (370 mm * 470 mm) size thin copper film dry etching performance that is etched by high electron temperature plasma source with low temperature substrate. Dry etching is performed using HCl gas in a reactive ion etching mode. In addition, scanning low temperature susceptor and the electron cyclotron resonance (ECR) plasma produced by rectangular‐type microwave slot antenna (ReSLAN) are used.

Key concepts: Electron cyclotron resonance, Dry etching, Susceptor, Reactive-ion etching, Ion source, Etching (microfabrication), Plasma, Materials science

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51‐3: Copper Thin Film Dry Etching Equipment via ECR Plasma Source — Research Paper | ScholarLens